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| AP9920GEO Pb Free Plating Product Advanced Power Electronics Corp. Low on-resistance Capable of 2.5V gate drive Optimal DC/DC battery application RoHS compliant D2 S2 G2 S2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) S1 D1 G1 S1 30V 28m 4.9A TSSOP-8 ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current , VGS @ 4.5V Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 10 4.9 3.9 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Max. Value 125 Unit /W Data and specifications subject to change without notice 201103051-1/4 AP9920GEO Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA VGS=4.5V, ID=4A VGS=4V, ID=4A VGS=2.5V, ID=2A Min. 30 0.3 - Typ. 13 11 1 4 8 10 23 7 590 110 85 2.2 Max. Units 27 28 36 1 1 25 30 18 950 3.3 V m m m V S uA uA uA nC nC nC ns ns ns ns pF pF pF VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=4A VDS=30V, VGS=0V VDS=24V ,VGS=0V VGS=10V ID=4A VDS=25V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=5V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=0.8A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/s Min. - Typ. 27 17 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 208/W when mounted on Min. copper pad. 2/4 AP9920GEO 30 30 T A =25 C ID , Drain Current (A) o ID , Drain Current (A) 5.0 V 4.5 V 3.5 V 2.5 V V G = 1.5 V T A =150 C o 5.0 V 4.5 V 3.5 V 2.5 V 20 20 V G = 1.5 V 10 10 0 0 2 4 6 0 0 2 4 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 210 1.9 170 I D = 2A T A =25 o C 1.5 I D = 4A V G = 4.5V 130 Normalized RDS(ON) RDS(ON) (m ) 1.1 90 0.7 50 10 0.3 1 2 3 4 5 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance 4 2 3 1.5 2 o T j =150 C Normalized VGS(th) (V) 0.8 IS(A) T j =25 o C 1 1 0.5 0 0 0.2 0.4 0.6 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP9920GEO f=1.0MHz 12 1000 ID= 4A VGS , Gate to Source Voltage (V) 9 C iss C (pF) V DS =15V V DS =20V V DS =25V 6 100 C oss C rss 3 0 0 5 10 15 20 25 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor = 0.5 10 100us 1ms 0.2 ID (A) 1 10ms 100ms 0.1 0.1 0.05 PDM t T 0.02 0.1 T A =25 C Single Pulse 0.01 0.1 1 10 o 1s DC 100 Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=208 oC/W Single Pulse 0.01 0.01 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 20 V DS =5V 15 VG QG 4.5V ID , Drain Current (A) T j =25 o C 10 T j =150 o C QGS QGD 5 Charge 0 0 1 2 3 Q V GS , Gate-to-Source Voltage (V) Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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